NTD60N02R-35G product image

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Product details

NTD60N02R-35G

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: I-Pak

Description

N-Channel 25 V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W (Tc) Through Hole I-Pak

Datasheet View datasheet

Specifications

Base Product Number: NTD60
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Series: -
Supplier Device Package: I-Pak
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA