NTD4302-1G product image

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Product details

NTD4302-1G

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: I-PAK

Description

N-Channel 30 V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W (Tc) Through Hole I-PAK

Datasheet View datasheet

Specifications

Base Product Number: NTD43
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Series: -
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA