NTD3055-150-1G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTD3055-150-1G

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: I-PAK

Description

N-Channel 60 V 9A (Ta) 1.5W (Ta), 28.8W (Tj) Through Hole I-PAK

Datasheet View datasheet

Specifications

Base Product Number: NTD30
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Series: -
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA