- Current - Continuous Drain (Id) @ 25°C
- 400mA (Ta)
- Drain to Source Voltage (Vdss)
- 60 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 0.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 40 pF @ 10 V
- Mfr
- Toshiba Semiconductor and Storage
- Mounting Type
- Surface Mount
- Operating Temperature
- 150°C
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max)
- 270mW (Ta)
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 100mA, 10V
- Series
- Automotive, AEC-Q101
- Supplier Device Package
- S-Mini
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA