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Product details

RBA160N04AHPF-4UA01#GB0

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Single
Package: Tray

Description

N-Channel 40 V 160A (Tc) 1.8W (Ta), 250W (Tc) Surface Mount TO-263-7

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Mfr: Renesas Electronics America Inc
Mounting Type: Surface Mount
Operating Temperature: 175°C
Package: Tray
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: TO-263-7
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA