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Product details

SSM3K341R,LXHF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: SOT-23F

Description

N-Channel 60 V 6A (Ta) 1.2W (Ta) Surface Mount SOT-23F

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 175°C
Package: Tape & Reel (TR), Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Series: Automotive, AEC-Q101, U-MOSVIII-H
Supplier Device Package: SOT-23F
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 100µA