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Product details

SSM3K361TU,LXHF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: UFM

Description

N-Channel 100 V 3.5A (Ta) 1W (Ta) Surface Mount UFM

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 175°C
Package: Tape & Reel (TR), Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Series: Automotive, AEC-Q101, U-MOSVIII-H
Supplier Device Package: UFM
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 100µA