IPB80P04P405ATMA2 product image

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Product details

IPB80P04P405ATMA2

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO263-3-2

Description

P-Channel 40 V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

Datasheet View datasheet

Specifications

Base Product Number: IPB80P
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40 V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Series: Automotive, AEC-Q101, OptiMOS®-P2
Supplier Device Package: PG-TO263-3-2
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA