PSMN015-100YLX product image

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Product details

PSMN015-100YLX

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: LFPAK56, Power-SO8

Description

N-Channel 100 V 69A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: SC-100, SOT-669
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Series: -
Supplier Device Package: LFPAK56, Power-SO8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.1V @ 1mA