IPP50R190CE product image

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Product details

IPP50R190CE

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO220-3-1

Description

N-Channel 500 V 28.8A (Tc) 152W (Tc) Through Hole PG-TO220-3-1

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 13V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Series: CoolMOS™
Supplier Device Package: PG-TO220-3-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 510µA