- Current - Continuous Drain (Id) @ 25°C
- 2.7A (Ta)
- Drain to Source Voltage (Vdss)
- 60 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 2.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 290 pF @ 25 V
- Mfr
- International Rectifier
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max)
- 1.25W (Ta)
- Rds On (Max) @ Id, Vgs
- 92mOhm @ 2.7A, 10V
- Series
- HEXFET®
- Supplier Device Package
- Micro3™/SOT-23
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±16V
- Vgs(th) (Max) @ Id
- 2.5V @ 25µA