IPP048N04NG product image

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Product details

IPP048N04NG

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 40 V 70A (Tc) 79W (Tc) Through Hole PG-TO220-3-1

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 70A, 10V
Series: OptiMOS® 3
Supplier Device Package: PG-TO220-3-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 200µA