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Product details

2N6806

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 200 V 6.5A (Tc) 75W (Tc) Through Hole TO-204AA (TO-3)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Mfr: International Rectifier
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-204AA, TO-3
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 6.5A, 10V
Series: HEXFET®
Supplier Device Package: TO-204AA (TO-3)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA