PSMN3R5-80PS,127 package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

PSMN3R5-80PS,127

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 80 V 120A (Tc) 338W (Tc) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Mfr: NXP Semiconductors
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Series: -
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA