Product image not available

Product details

FCP380N60E

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 600 V 10.2A (Tc) 106W (Tc) Through Hole TO-220-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Series: SuperFET® II
Supplier Device Package: TO-220-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA