PSMN2R6-60PSQ127 product image

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Product details

PSMN2R6-60PSQ127

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 60 V 150A (Ta) 326W (Ta) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Drain to Source Voltage (Vdss): 60 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 326W (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Series: TrenchMOS™
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA