IRF200S234 product image

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Product details

IRF200S234

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO263-3

Description

N-Channel 200 V 90A 417W (Tc) Surface Mount PG-TO263-3

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 90A
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Mfr: International Rectifier
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Series: -
Supplier Device Package: PG-TO263-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 250µA