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Product details

2N6847

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 200 V 2.5A (Tc) 20W (Tc) Through Hole TO-205AF (TO-39)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Mfr: International Rectifier
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-205AF Metal Can
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 1.725Ohm @ 2.5A, 10V
Series: HEXFET®
Supplier Device Package: TO-205AF (TO-39)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA