- Current - Continuous Drain (Id) @ 25°C
- 230mA (Ta)
- Drain to Source Voltage (Vdss)
- 50 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 0.35 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 36 pF @ 25 V
- Mfr
- NXP USA Inc.
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- SC-101, SOT-883
- Power Dissipation (Max)
- 340mW (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs
- 7.5Ohm @ 100mA, 10V
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Supplier Device Package
- DFN1006-3
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA