- Current - Continuous Drain (Id) @ 25°C
- 9.3A (Tc)
- Drain to Source Voltage (Vdss)
- 250 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 705 pF @ 25 V
- Mfr
- International Rectifier
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Bulk
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max)
- 100W (Tc)
- Rds On (Max) @ Id, Vgs
- 345mOhm @ 5.6A, 10V
- Series
- HEXFET®
- Supplier Device Package
- DPAK
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 5V @ 50µA