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Product details

AUIRLU024Z

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 55 V 16A (Tc) 35W (Tc) Through Hole I-PAK

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Mfr: International Rectifier
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Series: HEXFET®
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 3V @ 250µA