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Product details

IRF7759L2TRPBF

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: DirectFET™ Isometric L8

Description

N-Channel 75 V 26A (Ta), 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Drain to Source Voltage (Vdss): 75 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V
Mfr: International Rectifier
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: DirectFET™ Isometric L8
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
Series: HEXFET®
Supplier Device Package: DirectFET™ Isometric L8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA