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Product details

IPP60R180C7

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 600 V 13A (Tc) 68W (Tc) Through Hole PG-TO220-3-1

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Series: CoolMOS™
Supplier Device Package: PG-TO220-3-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 260µA