IRLR3636PBF product image

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Product details

IRLR3636PBF

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: D-Pak

Description

N-Channel 60 V 50A (Tc) 143W (Tc) Surface Mount D-Pak

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Mfr: International Rectifier
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Series: HEXFET®
Supplier Device Package: D-Pak
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2.5V @ 100µA