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Product details

IRFB3307ZPBF

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO220-3-904

Description

N-Channel 75 V 120A (Tc) 230W (Tc) Through Hole PG-TO220-3-904

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 75 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Mfr: International Rectifier
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Series: HEXFET®
Supplier Device Package: PG-TO220-3-904
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1.037mA