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Product details

IPW65R029CFD7XKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO247-3

Description

N-Channel 650 V 69A (Tc) 305W (Tc) Through Hole PG-TO247-3

Datasheet View datasheet

Specifications

Base Product Number: IPW65R029
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drain to Source Voltage (Vdss): 650 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Series: CoolMOS™
Supplier Device Package: PG-TO247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA