BSC020N025S G product image

Image shown for reference only. Refer to the product datasheet for exact specifications. 所示图片仅供参考。确切规格请参考产品数据手册即可

Product details

BSC020N025S G

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TDSON-8-1

Description

N-Channel 25 V 30A (Ta), 100A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount PG-TDSON-8-1

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TDSON-8-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 110µA