IPS06N03LA G product image

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Product details

IPS06N03LA G

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO251-3-11

Description

N-Channel 25 V 50A (Tc) 83W (Tc) Through Hole PG-TO251-3-11

Datasheet View datasheet

Specifications

Base Product Number: IPS06N
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TO251-3-11
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 40µA