IPB100N06S3-04 product image

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Product details

IPB100N06S3-04

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 55 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2

Datasheet Not provided

Specifications

Base Product Number: IPB100N
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TO263-3-2
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 150µA