BTS113ANKSA1 product image

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Product details

BTS113ANKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 60 V 11.5A (Tc) 40W (Tc) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 5.8A, 4.5V
Series: TEMPFET®
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA