IRFHM8337TRPBF-IR product image

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Product details

IRFHM8337TRPBF-IR

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: 8-PQFN-Dual (3.3x3.3), Power33

Description

N-Channel 30 V 12A (Ta) 2.8W (Ta), 25W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3), Power33

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Mfr: International Rectifier
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: 8-PowerVDFN
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Series: HEXFET®
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.35V @ 25µA