IPD50N04S308ATMA1-INF product image

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Product details

IPD50N04S308ATMA1-INF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO252-3

Description

N-Channel 40 V 50A (Tc) 68W (Tc) Surface Mount PG-TO252-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TO252-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 40µA