Product image not available

Product details

IRFD9110

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: 4-DIP, Hexdip, HVMDIP

Description

P-Channel 100 V 700mA (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Datasheet View datasheet

Specifications

Base Product Number: IRFD9110
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Mfr: Harris Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Series: -
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA