- Current - Continuous Drain (Id) @ 25°C
- 46A (Ta), 375A (Tc)
- Drain to Source Voltage (Vdss)
- 40 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 330 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 11880 pF @ 25 V
- Mfr
- International Rectifier
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Bulk
- Package / Case
- DirectFET™ Isometric L8
- Power Dissipation (Max)
- 3.8W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs
- 1mOhm @ 160A, 10V
- Series
- HEXFET®
- Supplier Device Package
- DIRECTFET L8
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 4V @ 250µA