IRFS4410PBF product image

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Product details

IRFS4410PBF

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO263-3-2

Description

N-Channel 100 V 88A (Tc) 200W (Tc) Surface Mount PG-TO263-3-2

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drain to Source Voltage (Vdss): 100 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Mfr: International Rectifier
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Series: HEXFET®
Supplier Device Package: PG-TO263-3-2
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 150µA