IRFU1018EPBF product image

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Product details

IRFU1018EPBF

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: IPAK (TO-251AA)

Description

N-Channel 60 V 56A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 60 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Mfr: International Rectifier
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Series: HEXFET®
Supplier Device Package: IPAK (TO-251AA)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 100µA