RM35P100T2 product image

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Product details

RM35P100T2

Availability on request

Manufacturer: Rectron USA
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

P-Channel 100 V 35A (Tc) 104W (Tc) Through Hole TO-220-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6516 pF @ 25 V
Mfr: Rectron USA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Series: -
Supplier Device Package: TO-220-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA