Product image not available

Product details

RM20N650TI

Availability on request

Manufacturer: Rectron USA
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 650 V 20A (Tc) 33W (Tc) Through Hole TO-220F

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Mfr: Rectron USA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Series: -
Supplier Device Package: TO-220F
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA