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Product details

RM110N85T2

Availability on request

Manufacturer
Rectron USA
Category
Transistors - FETs, MOSFETs - Single
Package
Tube

Description

N-Channel 85 V 110A (Tc) 145W (Tc) Through Hole TO-220-3

Datasheet Not provided
Specifications
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drain to Source Voltage (Vdss)
85 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3870 pF @ 40 V
Mfr
Rectron USA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power Dissipation (Max)
145W (Tc)
Rds On (Max) @ Id, Vgs
6mOhm @ 55A, 10V
Series
-
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4.5V @ 250µA