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Product details

RM100N60T7

Availability on request

Manufacturer
Rectron USA
Category
Transistors - FETs, MOSFETs - Single
Package
Tube

Description

N-Channel 60 V 100A (Tc) 170W (Tc) Through Hole TO-247

Datasheet Not provided
Specifications
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 30 V
Mfr
Rectron USA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tube
Package / Case
TO-247-3
Power Dissipation (Max)
170W (Tc)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 40A, 10V
Series
-
Supplier Device Package
TO-247
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA