RM115N65T2 product image

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Product details

RM115N65T2

Availability on request

Manufacturer: Rectron USA
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 65 V 115A (Tc) 160W (Tc) Through Hole TO-220-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Mfr: Rectron USA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Series: -
Supplier Device Package: TO-220-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): +20V, -12V
Vgs(th) (Max) @ Id: 2.5V @ 250µA