SQ2389ES-T1_BE3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SQ2389ES-T1_BE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

P-Channel 40 V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Datasheet Not provided

Specifications

Base Product Number: SQ2389
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Series: Automotive, AEC-Q101, TrenchFET®
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA