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Product details

IRLML0100TRPBF-1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Micro3™/SOT-23

Description

N-Channel 100 V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Series: HEXFET®
Supplier Device Package: Micro3™/SOT-23
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2.5V @ 25µA