PSMN165-200K518 product image

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Product details

PSMN165-200K518

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: 8-SO

Description

N-Channel 200 V 2.9A (Tc) 3.5W (Tc) Surface Mount 8-SO

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Series: TrenchMOS™
Supplier Device Package: 8-SO
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA