BSS169L6327 product image

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Product details

BSS169L6327

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-SOT23-3-5

Description

N-Channel 100 V 170mA (Ta) 360mW (Ta) Surface Mount PG-SOT23-3-5

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
FET Feature: Depletion Mode
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Series: SIPMOS®
Supplier Device Package: PG-SOT23-3-5
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.8V @ 50µA