- Current - Continuous Drain (Id) @ 25°C
- 9.7A (Tc)
- Drain to Source Voltage (Vdss)
- 60 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 600 pF @ 25 V
- Mfr
- Fairchild Semiconductor
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Bulk
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Power Dissipation (Max)
- 3.8W (Ta), 49W (Tc)
- Rds On (Max) @ Id, Vgs
- 280mOhm @ 4.9A, 10V
- Series
- -
- Supplier Device Package
- I2PAK (TO-262)
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±30V
- Vgs(th) (Max) @ Id
- 4V @ 250µA