RFD20N03SM9A product image

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Product details

RFD20N03SM9A

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: TO-252-3 (DPAK)

Description

N-Channel 30 V 20A (Tc) 90W (Tc) Surface Mount TO-252-3 (DPAK)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Mfr: Harris Corporation
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Series: -
Supplier Device Package: TO-252-3 (DPAK)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA