- Current - Continuous Drain (Id) @ 25°C
- 7.5A (Ta)
- Drain to Source Voltage (Vdss)
- 20 V
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 8.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1147 pF @ 10 V
- Mfr
- Infineon Technologies
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Power Dissipation (Max)
- 2W (Ta)
- Rds On (Max) @ Id, Vgs
- 22mOhm @ 7.5A, 4.5V
- Series
- OptiMOS™2
- Supplier Device Package
- PG-TSOP6-6-6
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±12V
- Vgs(th) (Max) @ Id
- 1.2V @ 30µA