IPB100P03P3L-04 product image

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Product details

IPB100P03P3L-04

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO263-3-2

Description

P-Channel 30 V 100A (Tc) 200W (Tc) Surface Mount PG-TO263-3-2

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Series: OptiMOS™-P
Supplier Device Package: PG-TO263-3-2
Technology: MOSFET (Metal Oxide)
Vgs (Max): +5V, -16V
Vgs(th) (Max) @ Id: 2.1V @ 475µA