HUF75339G3_NL product image

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Product details

HUF75339G3_NL

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247

Description

N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-247

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-247-3
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Series: UltraFET®
Supplier Device Package: TO-247
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA